A Samsung Electronics register entrance of considered one of its many buildings


Samsung Electronics is ready to disclose its “dream memory,” three-dimensional (3D) DRAM, in 2025, marking a primary within the semiconductor trade. The transfer is seen as Samsung reigniting its “technology gap” within the excessive bandwidth reminiscence (HBM) market the place it has beforehand misplaced floor to SK hynix.


According to trade sources on April 2, Samsung introduced the event highway map for 3D DRAM on the Global Semiconductor Conference, MEMCON 2024, held within the United States from March 26 to twenty-eight. Unlike HBM, which will increase capability by stacking a number of DRAM modules, 3D DRAM vertically stacks cells inside a single DRAM module.


Current DRAM expertise arranges as much as 62 billion cells horizontally on a substrate, making it troublesome to keep away from present interference because of the dense packing of transistors. Vertical stacking of cells widens the hole between transistors, decreasing interference and permitting for the next cell density inside the identical space. The base capability of 3D DRAM is 100 Gb (gigabits), triple that of the biggest present DRAM at 36 Gb.


Samsung’s highway map signifies that by 2025 it plans to introduce an early model of 3D DRAM utilizing Vertical Channel Transistor (VCT) expertise. VCT expertise entails vertically aligning the channel via which electrons circulate in a transistor and surrounding it with a gate that acts as a change. A full cell stack, together with capacitors, often known as “stacked DRAM,” is slated for launch round 2030.


The benefit of 3D DRAM is its capacity to course of high-capacity knowledge in a smaller space in comparison with current DRAM. This makes it extremely prone to be utilized first to compact IT gadgets akin to smartphones and laptops. In the medium to long run, it has important potential to be used in automotive functions. As autonomous automobiles change into extra widespread, the necessity for DRAM able to real-time processing of huge quantities of knowledge collected on the highway will enhance. The 3D DRAM market is anticipated to achieve a dimension of US$100 billion by 2030.


Samsung Electronics has additionally begun narrowing the transistor circuit line width to 8-9 nm by 2027-2028, immediately affecting the efficiency of 3D DRAM. The present newest DRAM line width is thought to be round 12 nm.


Competitors have additionally began growing 3D DRAM, however have but to reveal their highway maps. Micron started analysis on 3D DRAM in 2019 and is thought to carry essentially the most patents, over thirty, among the many three firms. SK hynix has additionally revealed the 3D DRAM idea at numerous conferences.


Chinese corporations are additionally accelerating their improvement of 3D DRAM. China’s high reminiscence firm, Changxin Memory Technologies (CXMT), and the Chinese Academy of Sciences have been asserting analysis outcomes on 3D DRAM since final 12 months.


The Wall Street Journal (WSJ) just lately reported, “Samsung is regaining its semiconductor technology competitiveness.” On the day of the announcement, Samsung Electronics’ inventory worth closed up 3.66% at 85,000 gained.

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